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INTEGRATED CIRCUITS
DATA SHEET
TDA8512J 26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
Preliminary specification File under Integrated Circuits, IC01 2001 Nov 16
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
CONTENTS 1 2 3 4 5 6 7 8 8.1 8.2 8.3 8.4 9 10 11 12 13 14 14.1 14.2 14.3 14.4 14.5 14.6 14.7 FEATURES APPLICATIONS GENERAL DESCRIPTION QUICK REFERENCE DATA ORDERING INFORMATION BLOCK DIAGRAM PINNING FUNCTIONAL DESCRIPTION Mode select switch Mode select Built-in protection circuits Short-circuit protection LIMITING VALUES HANDLING THERMAL CHARACTERISTICS DC CHARACTERISTICS AC CHARACTERISTICS APPLICATION INFORMATION Input configuration Output power Power dissipation Supply Voltage Ripple Rejection (SVRR) Switch-on and switch-off PCB layout and grounding Typical performance characteristics 15 16 16.1 16.2 16.3 16.4 17 18 19 PACKAGE OUTLINE SOLDERING
TDA8512J
Introduction to soldering through-hole mount packages Soldering by dipping or by solder wave Manual soldering Suitability of through-hole mount IC packages for dipping and wave soldering methods DATA SHEET STATUS DEFINITIONS DISCLAIMERS
2001 Nov 16
2
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
1 FEATURES * Flexible leads * Low thermal resistance
TDA8512J
* Requires very few external components * High output power * Low output offset voltage Bridge-Tied Load (BTL) channel * Fixed gain * Good ripple rejection * Mode select switch: operating, mute and standby * Short-circuit safe to ground and across load * Low power dissipation in any short-circuit condition * Thermally protected * Reverse polarity safe * Electrostatic discharge protection * No switch-on and switch-off plops 4 QUICK REFERENCE DATA SYMBOL General VP IORM Iq(tot) Istb BTL channel Po SVRR Vn(o) Zi VOO SE channels Po output power output power supply voltage ripple rejection noise output voltage input impedance DC output offset voltage supply voltage repetitive peak output current total quiescent current standby current PARAMETER
* Identical inputs: inverting and non-inverting. 2 APPLICATIONS
* Multimedia systems * Active speaker systems (stereo with sub woofer or QUAD). 3 GENERAL DESCRIPTION
The TDA8512J is an integrated class-B output amplifier in a 17-lead Single-In-Line (SIL) power package. It contains 4 x 13 W Single Ended (SE) amplifiers of which two can be used to configure a 26 W BTL amplifier.
CONDITIONS
MIN.
TYP.
MAX.
UNIT
6 - - - RL = 4 ; THD = 10% Rs = 0 - 46 - 25 - THD = 10% RL = 4 RL = 2 - - 46 Rs = 0 - 50
15 - 80 0.1
18 4 100.0 - - - - 150
V A mA A W dB V k mV
26 - 70 - -
7.0 13.0 - 50 -
- - - - -
W W dB V k
SVRR Vn(o) Zi 5
supply voltage ripple rejection noise output voltage input impedance
ORDERING INFORMATION TYPE NUMBER PACKAGE NAME DBS17P DESCRIPTION plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) 3 VERSION SOT243-1
TDA8512J 2001 Nov 16
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
6 BLOCK DIAGRAM
VP1 5 INV1 1 60 k VA 2 k 18 k INV2 3 60 k VA 2 k 18 k VP power stage 8 OUT2 mute switch Cm power stage 6 OUT1 mute switch Cm VP2 13
TDA8512J
handbook, full pagewidth
TDA8512J
14 MODE standby reference voltage PROTECTIONS thermal short-circuit mute switch
standby switch VA
15 k x1 RR 4 15 k
mute reference voltage Cm
INV3
16 60 k
mute switch
INV3
15
VA 2 k 18 k power stage
10
OUT3
INV4
17 60 k
mute switch
Cm
VA REF 9 2 k input reference voltage 2 SGND 18 k power stage
12
OUT4
7 GND1
11
MGW426
GND2
Fig.1 Block diagram.
2001 Nov 16
4
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
7 PINNING PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 DESCRIPTION non-inverting input 1 signal ground non-inverting input 2 supply voltage ripple rejection supply voltage 1 output 1 power ground 1 output 2 reference voltage input output 3 power ground 2 output 4 supply voltage 2 mode select switch input inverting input 3 non-inverting input 3 non-inverting input 4
INV1 SGND INV2 RR VP1 OUT1 GND1 OUT2 REF 1 2 3 4 5 6 7 8 9 TDA8512J
TDA8512J
SYMBOL INV1 SGND INV2 RR VP1 OUT1 GND1 OUT2 REF OUT3 GND2 OUT4 VP2 MODE INV3 INV3 INV4
OUT3 10 GND2 11 OUT4 12 VP2 13 MODE 14 INV3 15 INV3 16 INV4 17
MGW427
Fig.2 Pin configuration.
2001 Nov 16
5
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
8 FUNCTIONAL DESCRIPTION 8.2 Mode select
TDA8512J
The TDA8512J contains four identical amplifiers and can be used in the configurations: * Two SE channels (fixed gain 20 dB) and one BTL channel (fixed gain 26 dB) * Four SE channels. (RL depends on the application). 8.1 Mode select switch
For the 3 functional modes; standby, mute and operate, the pin MODE can be driven by a 3-state logic output stage: e.g. microcontroller with some extra components for DC level shifting. (see Fig.10). Standby mode will be activated by a applying a low DC level between 0 and 2 V. The power consumption of the device will be reduced to less than 1.5 mW. The input and output pins are floating: high impedance condition. Mute mode will be activated by a applying a DC level between 3.3 and 6.4 V. The outputs of the amplifier will be muted (no audio output); however, the amplifier is DC biased and the DC level of the input and output pins stays on half the supply voltage. Operating mode is obtained at a DC level between 8.5 V and VP. 8.3 Built-in protection circuits
A special feature of the TDA8512J device is the mode select switch (pin MODE), offering: * Low standby current (<100 A) * Low switching current (low cost supply switch) * Mute facility. To avoid switch-on plops, it is advised to keep the amplifier in the mute mode for longer than 100 ms to allow charging of the input capacitors at pins INV1, INV2, INV3, INV3 and INV4. This can be achieved by: * Control via a microcontroller * An external timing circuit (see Fig.3). The circuit slowly ramps up the voltage at the pin MODE when switching on, and results in fast muting when switching off.
The device contains both a thermal protection, and a short-circuit protection. Thermal protection: The junction temperature is measured by a temperature sensor; at a junction temperature of about 160 C this detection circuit switches off the power stages. Short-circuit protection (outputs to ground, supply and across the load):
handbook, halfpage
VP
10 k
100
Short-circuit is detected by a so called Maximum Current Detection circuit, which measures the current in the positive, respectively negative supply line of each power stage. At currents exceeding (typical) 6 A, the power stages are switched off during some ms.
mode select switch
8.4
Short-circuit protection
47 F
100 k
MGA708
Fig.3 Mode select switch circuitry.
When a short-circuit during operation to either GND or across the load of one or more channels occurs, the output stages are switched off for approximately 20 ms. After that time, it is checked during approximately 50 s to see whether the short-circuit is still present. Due to this duty factor of 50 s per 20 ms, the average supply current is very low during this short-circuit (approximately 40 mA, see Fig.4).
2001 Nov 16
6
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
TDA8512J
handbook, full pagewidth I(A)
20 ms
MGW430
current in output stage short-circuit t (s) 50 s
Fig.4 Short-circuit wave form.
9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VP IOSM IORM Vsc Vrp Ptot Tstg Tamb Tvj Note 1. To ground and across load. 10 HANDLING ESD protection of this device complies with the Philips' General Quality Specification (GQS). PARAMETER supply voltage non-repetitive peak output current repetitive peak output current short-circuit safe voltage reverse polarity voltage total power dissipation storage temperature ambient temperature virtual junction temperature operating; note 1 operating no signal CONDITIONS MIN. - - - - - - - -55 -40 - MAX. 18 21 6 4 18 6 60 +150 +85 150 UNIT V V A A V V W C C C
2001 Nov 16
7
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
11 THERMAL CHARACTERISTICS In accordance with IEC 60747-1. SYMBOL Rth(j-a) Rth(j-c) PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air see Fig.5
TDA8512J
VALUE 40.0 1.3
UNIT K/W K/W
The measured thermal resistance of the IC-package (Rth(j-c)) is maximum 1.3 K/W if all four channels are driven. For a maximum ambient temperature of 60 C and VP = 15 V, the following calculation for the heatsink can be made: For the application two SE outputs with 2 load, the measured worst-case sine-wave dissipation is 2 x 7 W For the application BTL output with 4 load, the worst-case sine-wave dissipation is 12.5 W. So the total power dissipation is Pd(tot) = 2 x 7 + 12.5 W = 26.5 W. At Tj(max) = 150 C the temperature increase, caused by the power dissipation, is: T = 150 C - 60 C = 90 C. 90 So Pd(tot) x Rth(tot) = T = 90 K. As a result: R th ( tot ) = ---------- = 3.4 K/W which means: 26.5 Rth(hs) = Rth(tot) - Rth(j-c) = 3.4 - 1.3 = 2.1 K/W. The above calculation is for application at worst-case (stereo) sine-wave output signals. In practice, music signals will be applied. In that case the maximum power dissipation will be about the half the sine-wave power dissipation, which allows the use of a smaller heatsink. 90 So Pd(tot) x Rth(tot) = T = 90 K. As a result: R th ( tot ) = -------------- = 6.8 K/W which means: 13.25 Rth(hs) = Rth(tot) - Rth(j-c) = 6.8 - 1.3 = 5.5 K/W.
handbook, halfpage
virtual junction output 2 output 3 output 4
output 1
3.0 K/W
3.0 K/W 3.0 K/W
3.0 K/W
0.7 K/W
0.7 K/W
MEA860 - 2
0.2 K/W
case
Fig.5 Equivalent thermal resistance network.
2001 Nov 16
8
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
12 DC CHARACTERISTICS VP = 15 V; Tamb = 25 C; measured according to Figs 6 and 7; unless otherwise specified. SYMBOL Supply VP Iq(tot) VO VOO Vsw(on) V VO VOO Vstb Istb Isw(on) Notes 1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V. 2. Only for BTL channel (VOUT4 - VOUT3). supply voltage total quiescent current DC output voltage DC output offset voltage note 2 note 1 6 - - - 8.5 15 80 6.9 - - - - - - - 12 PARAMETER CONDITIONS MIN. TYP.
TDA8512J
MAX.
UNIT
18 160 - 150 - 6.4 2 150
V mA V mV
Mode select switch switch-on voltage V
Mute condition mute voltage output voltage DC output offset voltage Vi(max) = 1 V; fi = 1 kHz note 2 3.3 - - 0 - - V mV mV
Standby condition standby voltage standby current switch-on current 2 100 40 V A A
13 AC CHARACTERISTICS VP = 15 V; fi = 1 kHz; Tamb = 25 C; bandpass 22 Hz to 22 kHz; measured according to Figs 6 and 7; unless otherwise specified. SYMBOL BTL channel Po output power RL2 = 4 (see Fig.7); note 1 THD = 0.5% THD = 10% THD BP fro(l) fro(h) GV SVRR total harmonic distortion power bandwidth low frequency roll-off high frequency roll-off closed loop voltage gain supply voltage ripple rejection note 3; operating mute standby 48 46 80 - - - - - - dB dB dB Po = 1 W THD = 0.5%; Po = -1 dB with respect to 17 W at -1 dB; note 2 at -1 dB 16 22 - - - 20 25 20 26 0.06 - - - W W % Hz Hz kHz dB PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
20 to 15000 - 25 - 26 - - 27
2001 Nov 16
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Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
SYMBOL Zi Vn(o) PARAMETER input impedance noise output voltage operating; Rs = 0 ; note 4 operating; Rs = 10 k; note 4 mute; notes 4 and 5 SE channels Po output power RL1 = 2 (see Fig.7); note 1 THD = 0.5% THD = 10% RL1 = 4 (see Fig.7); note 1 THD = 0.5% THD = 10% THD fro(l) fro(h) Gv SVRR total harmonic distortion low frequency roll-off high frequency roll-off closed loop voltage gain supply voltage ripple rejection note 3; operating mute standby Zi Vn(o) input impedance noise output voltage operating; Rs = 0 ; note 4 operating; Rs = 10 k; note 4 mute; notes 4 and 5 cs GV Notes 1. Output power is measured directly at the output pins of the device. 2. Frequency response externally fixed. channel separation channel unbalance Rs = 10 k 48 46 80 50 - - - 40 - - - - 60 50 70 50 60 - Po = 1 W at -1 dB; note 2 at -1 dB - - - - 20 19 5.5 7.0 0.06 25 - 20 8.0 11.0 10.0 13.0 CONDITIONS MIN. 25 - - - 30 70 100 60 TYP.
TDA8512J
MAX. 38 - 200 -
UNIT k V V V
- - - - - - - 21 - - - 75 - 100 - - 1
W W W W % Hz kHz dB dB dB dB k V V V dB dB
3. Ripple rejection measured at the output with a source impedance of 0 ; maximum ripple of 2 V (p-p) and at a frequency between 100 Hz to 10 kHz. 4. Noise measured in a bandwidth of 20 Hz to 20 kHz. 5. Noise output voltage independant of Rs (Vi = 0 V).
2001 Nov 16
10
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
14 APPLICATION INFORMATION 14.1 Input configuration
TDA8512J
For suppressing higher frequency transients (spikes) on the supply line a capacitor with low ESR (typical 0.1 F) has to be placed as close as possible to the device. For suppressing lower frequency noise and ripple signals, a large electrolytic capacitor (e.g.1000 F or more) must be placed close to the device. The bypass capacitor on the pin RR reduces the noise and ripple on the mid rail voltage. For good THD and noise performance, a low ESR capacitor is recommended. 14.5 Switch-on and switch-off
* Inputs 1 and 2 are used for SE application on pin OUT1, respectively pin OUT2 * Input 3 can be configured for both SE and BTL application * Input 4 can be used for SE application of pin OUT4, or for BTL application together with input 3. See Figs 6 and 7. Note that the DC level of all input pins is half the supply voltage VP, so coupling capacitors for the input pins are necessary! Cut-off frequency for the input is: fi(co) = 12 Hz. Therefore it is not necessary to use high capacitor values on the input; so the delay during switch-on, which is necessary for charging the input capacitors, can be minimised. This results in a good low frequency response and good switch-on behaviour. 14.2 Output power
To avoid audible plops during switching on and switching off the supply voltage, the pin MODE has to be set in standby condition (<2V) before the voltage is applied (switch-on) or removed (switch-off). Via the mute mode, the input- and SVRR-capacitors are smoothly charged. The turn-on and turn-off time can be influenced by an RC-circuit on the pin MODE (see Fig.3). Rapidly switching on and off of the device or the pin MODE, may cause "click and pop" noise. This can be prevented by a proper timing on the pin MODE. 14.6 PCB layout and grounding
The output power versus supply voltage has been measured on the output pins of one channel, and at THD = 10%. The maximum output power is limited by the maximum supply voltage of 18 V and the maximum available output current: 4 A repetitive peak current. 14.3 Power dissipation
The power dissipation graphs are given for one output channel in SE, respectively BTL application. So for total worst-case power dissipation the Pd of each channel must be added up. 14.4 Supply Voltage Ripple Rejection (SVRR)
For high system performance level certain grounding techniques are imperative. The input reference grounds have to be tied with their respective source grounds, and must have separate traces from the power ground traces; this will separate the large (output) signal currents from interfering with the small AC input signals. The small-signal ground traces should be physically located as far as possible from the power ground traces. Supply- and output-traces should be as wide as practical for delivering maximum output power. The PCB layout, which accommodates the TDA8510, TDA8511, and TDA8512 products, is shown in Fig.8.
The SVRR is measured with an electrolytic capacitor of 100 F on pin RR and at a bandwidth of 10 Hz to 80 kHz, whereas the lowest frequencies can be lower than 10 Hz. Proper supply bypassing is critical for low noise performance and high power supply rejection. The respective capacitor locations should be as close to the device as possible, and grounded to the power ground. A proper power supply decoupling also prevents oscillations.
2001 Nov 16
11
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
TDA8512J
handbook, full pagewidth
VP 100 nF MODE 14 VP1 5 VP2 13 2200 F
TDA8512J
1 k (1) input 1 220 nF 60 k 8 OUT2 INV2 3 220 nF Cout(2) SGND 2 60 k reference voltage RL INV1 1 6 OUT1 Cout(2) RL
1 k (1) input 2
REF 9 INV3 15 1 k (1) input 3 220 nF 60 k 1 k (1) input 4 supply voltage ripple rejection 220 nF 100 F 12 OUT4 INV4 17 Cout(2) RR 4 1/2VP RL 7 GND1 11 GND2
MGW429
INV3 16
60 k
10 OUT3 Cout(2) RL
(1) Advised when driven with hard clipping input signals. (2) For frequencies down to 20 Hz: Cout = 4700 F at RL = 2 . Cout = 2200 F at RL = 4 .
Fig.6 Application diagram for four SE amplifiers.
2001 Nov 16
12
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
TDA8512J
handbook, full pagewidth
VP 100 nF MODE 14 VP1 5 VP2 13 2200 F
TDA8512J
1 k (1) input 1 220 nF 60 k 8 OUT2 INV2 3 220 nF Cout(2) SGND 2 60 k reference voltage R L1 INV1 1 6 OUT1 Cout(2) R L1
1 k (1) input 2
REF 9 INV3 16 60 k 10 OUT3
INV3 15
inputs 3 and 4
1 k (1) 470 nF INV4 17
60 k 12 OUT4
R L2 4
RR 100 F
4
1/2VP
7 GND1
11 GND2
MGW428
(1) Advised when driven with hard clipping input signals. (2) For frequencies down to 20 Hz: Cout = 4700 F at RL1 = 2 . Cout = 2200 F at RL1 = 4 .
Fig.7 Application diagram for one BTL amplifier and two SE amplifiers.
2001 Nov 16
13
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
TDA8512J
handbook, full pagewidth
78 mm
55 mm
a. Top view copper layout.
TDA8510 TDA8511 TDA8512
Diag 100 F 4700 F 100 nF out 2 2200 F 4700 F out 1 off on 10 k out 4 470 nF out 3 220 nF
47 F
S-Gnd
1 IN 2
Gnd
VP
4 IN 3
mode
MGW520
b. Top view component layout. Fig.8 Printed-circuit board layout.
2001 Nov 16
14
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
14.7 Typical performance characteristics
MGW431
TDA8512J
handbook, halfpage I
120 q (mA) 100
4 Vo 10 handbook, halfpage
MGW432
(mV) 103 102
80
10
60
1
(1) (2)
40
10 -1 10 -2 10 -3
20
0 7 9 11 13 15 17 VP (V) 19
0
2
4
6
8 VMODE (V)
10
(1) BTL mode. (2) SE mode.
Fig.9
Quiescent current as a function of supply voltage; measured without load.
Fig.10 Output voltage as a function of mode select voltage.
handbook, halfpage
10
MGW433
MGW434
handbook, halfpage
10
THD (%) 1
(1)
THD (%) 1
(1)
10 -1
(2)
10 -1
(2) (3) (3)
10 -2 10 -2
10 -1
1
10
Po (W)
102
10 -2 10 -2
10 -1
1
10
Po (W)
102
SE mode. (1) fi = 10 kHz.
(2) fi = 1 kHz. (3) fi = 100 Hz.
SE mode. (1) fi = 10 kHz.
(2) fi = 1 kHz. (3) fi = 100 Hz.
Fig.11 THD as a function of output power at RL = 2 .
Fig.12 THD as a function of output power at RL = 4 .
2001 Nov 16
15
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
TDA8512J
handbook, halfpage
0
MGW436
MGW435
handbook, halfpage
10
SVRR (dB) -20
THD (%) 1
-40
(1) (2)
10 -1
-60
(3) (4)
(1) (2)
-80 10 -2
10 -1
1
10
fi (kHz)
102
10 -2 10 -2
10 -1
1
10
fi (kHz)
102
SE mode. (1) Mute mode channel 2. (2) Mute mode channel 1.
(3) Operating mode channel 2. (4) Operating mode channel 1.
SE mode. (1) RL = 4 . (2) RL = 2 .
Fig.13 SVRR as a function of frequency at VREF = 1 V; no bandpass applied.
Fig.14 THD as a function of frequency at Po = 1 W; no bandpass applied.
handbook, halfpage
0
MGW443
MGW444
cs (dB)
handbook, halfpage
20
-20
Po (W) 16
(1)
(2)
12 -40 8 -60 4
(3)
(4)
-80 10 -2
10 -1
1
10
fi (kHz)
102
0 5 10 15 VP (V) 20
SE mode.
SE mode. (1) RL = 2 ; THD = 10%. (2) RL = 2 ; THD = 0.5%.
(3) RL = 4 ; THD = 10%. (4) RL = 4 ; THD = 0.5%.
Fig.15 Channel separation as a function of frequency; no bandpass applied.
Fig.16 Output power as a function of supply voltage.
2001 Nov 16
16
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
TDA8512J
MGW445
MGW446
handbook, halfpage
10
handbook, halfpage
12
Pd (W)
Pd
8
(W) 10
(1)
8 6
(1)
6 4
(2)
(2)
4
2
2
0 0 4 8 12 Po (W) 16
0 5 10 15 VP (V) 20
SE mode. (1) RL = 2 . (2) RL = 4 .
SE mode. (1) RL = 2 . (2) RL = 4 .
Fig.17 Power dissipation as a function of output power at VP = 15 V.
Fig.18 Power dissipation as a function of supply voltage.
handbook, halfpage
4
MGW447
handbook, halfpage
4
MGW448
BP (dB) 2
BP (dB) 2
0
0
-2
-2
-4 10 -2
10 -1
1
10
fi (kHz)
102
-4 10 -2
10 -1
1
10
fi (kHz)
102
SE mode. VP = 15 V; RL = 2 . Po = 8.5 W; THD = 0.5%.
BTL mode. VP = 15 V; RL = 4 . Po = 17 W; THD = 0.5%.
Fig.19 Power bandwidth as a function of frequency; no bandpass applied.
Fig.20 Power bandwidth as a function of frequency; no bandpass applied.
2001 Nov 16
17
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
TDA8512J
handbook, halfpage
10
MGW437
handbook, halfpage
10
MGW438
THD (%) 1
(1)
THD (%) 1
10 -1
(2) (3)
10 -1
10 -2
10 -2
10 -1
1
10
Po (W)
102
10 -2 10 -2
10 -1
1
10
fi (kHz)
102
BTL mode. (1) fi = 10 kHz.
(2) fi = 1 kHz. (3) fi = 100 Hz.
BTL mode. Po = 1 W; RL = 4 .
Fig.21 THD as a function of output power at RL = 4 .
Fig.22 THD as a function of frequency; no bandpass applied.
handbook, halfpage
0
MGW439
MGW440
handbook, halfpage
40
SVRR (dB) -20
Po (W) 30
(1)
(2)
-40
20
(3)
(4)
-60
(1)
10
(2)
-80 10 -2
10 -1
0 1 10 fi (kHz) 102 5 10 15 VP (V) 20
BTL mode. (1) Operating. (2) Mute.
BTL mode. (1) RL = 4 ; THD = 10%. (2) RL = 4 ; THD = 0.5%.
(3) RL = 8 ; THD = 10%. (4) RL = 8 ; THD = 0.5%.
Fig.23 SVRR as a function of frequency at VREF = 1 V; no bandpass applied.
Fig.24 Output power as a function of supply voltage.
2001 Nov 16
18
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
TDA8512J
MGW441
handbook, halfpage
16
handbook, halfpage
20
MGW442
Pd (W) 12
(1)
Pd (W) 16
(1)
12 8 8
(2) (2)
4 4
0 0 10 20 Po (W) 30
0 5 10 15 VP (V) 20
BTL mode. (1) RL = 4 . (2) RL = 8 .
BTL mode. (1) RL = 4 . (2) RL = 8 .
Fig.25 Power dissipation as a function of output power at VP = 15 V.
Fig.26 Power dissipation as a function of supply voltage.
2001 Nov 16
19
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
15 PACKAGE OUTLINE DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
TDA8512J
SOT243-1
non-concave D x Dh
Eh
view B: mounting base side
d
A2
B j E A
L3
L
Q c vM
1 Z e e1 bp wM
17 m e2
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 17.0 15.5 A2 4.6 4.4 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 2.54 e1 e2 Eh 6 j 3.4 3.1 L 12.4 11.0 L3 2.4 1.6 m 4.3 Q 2.1 1.8 v 0.8 w 0.4 x 0.03 Z (1) 2.00 1.45
1.27 5.08
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT243-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 97-12-16 99-12-17
2001 Nov 16
20
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
16 SOLDERING 16.1 Introduction to soldering through-hole mount packages
TDA8512J
The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. 16.3 Manual soldering
This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. 16.2 Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joints for more than 5 seconds. 16.4
Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING WAVE suitable(1)
DBS, DIP, HDIP, SDIP, SIL Note
suitable
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
2001 Nov 16
21
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
17 DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
TDA8512J
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 18 DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 19 DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Nov 16
22
Philips Semiconductors
Preliminary specification
26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
NOTES
TDA8512J
2001 Nov 16
23
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
753503/01/pp24
Date of release: 2001
Nov 16
Document order number:
9397 750 08677

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